RHEED investigation of the formation process of InAs quantum dots on (100) InAlAs/InP for application to photonic devices in the 1.55μm range
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
2. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
3. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
4. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
5. Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
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1. Annealing-Induced Structural Evolution of InAs Quantum Dots on InP (111)A Formed by Droplet Epitaxy;Crystal Growth & Design;2021-05-27
2. Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector;Chinese Physics B;2018-04
3. Studying the formation of nitrogen δ-doped layers on GaAs(001) using reflection high-energy electron diffraction;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-03
4. Ordering of Self-Assembled Quantum Wires on InP(001) Surfaces;One-Dimensional Nanostructures;2008
5. Formation of In-(2×1) and In islands on Si(100)-(2×1) by femtosecond pulsed laser deposition;Journal of Applied Physics;2007-06
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