Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
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2. SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactor
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5. Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
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