Morphological instabilities, segregation, and reconstruction at interfaces: a more realistic picture of the normal and inverted interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. Transmission electron microscope observation of lattice image of AlxGa1−xAs‐AlyGa1−yAs superlattices with high contrast
2. Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution
3. Long range gallium segregation in the AlAs layers of GaAs/AlAs superlattices
4. Evidence for quantum well asymmetry in optical absorption
5. Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Interface modulation and quantum well to quantum wire crossover in semiconductor heterostructures;Physical Review B;2001-12-07
2. Semiconductor Hetrostructures with Non-Ideal Interfaces: Electronic Structure and Optical Properties;physica status solidi (a);1999-05
3. Interface Characterization of Semiconductor Quantum Nanostructures;Japanese Journal of Applied Physics;1997-06-30
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