Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application-Reference-Cited by-同舟云学术

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Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application

Published:1998-05 Issue:3-4 Volume:187 Page:347-354
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Alexandre F,Parillaud O,Nguyen D.C,Azoulay R,Quillec M,Bouchoule S,Le Mestreallan G,Juhel M,Le Roux G,Rao E.V.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Selective growth of InP buried structure by chloride vapor phase epitaxy

2. Regrowth of Semi‐Insulating InP around Etched Mesas Using Hydride Vapor Phase Epitaxy

3. Temporally resolved regrowth of InP

4. R. Beccard, S. Willem, A. Dehe, K. Heime, Proc. 5th Int. Conf. InP & Rel. Mater., vol. 56, 1993.

5. Zinc‐stimulated outdiffusion of iron in InP

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues;Handbook of Crystal Growth;2015

2. Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers;Journal of Electronic Materials;2011-10-27

3. Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies;Journal of Crystal Growth;2001-01

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