Surface structure control of GaAs (111)A vicinal substrates by metal-organic vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Atomic layer epitaxy of GaAs and GaAsxP1 − x on nominally oriented GaAs(111) substrates with high quality surface and interfaces
2. Crystallographic selective growth of GaAs by atomic layer epitaxy
3. Multiatomic step formation with excellent uniformity on vicinal (1 1 1)A GaAs surfaces by metalorganic vapor-phase epitaxy
4. Growth process of III–V compound semiconductors by migration-enhanced epitaxy
5. Low-energy electron-microscopy investigations of orientational phase separation on vicinal Si(111) surfaces
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1. Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces;Journal of Crystal Growth;2003-10
2. Growth of Self-Organized Quantum Dots;Semiconductor Quantum Dots;2002
3. Kinetic surface patterning in two-particle models of epitaxial growth;Applied Surface Science;2001-05
4. Low-index facet formation in InGaAs islands on GaAs (n11)B substrates;Journal of Crystal Growth;2000-12
5. A new model of morphological instabilities during epitaxial growth: from step bunching to mounds formation;Journal of Crystal Growth;2000-12
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