SiC growth in tantalum containers by sublimation sandwich method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum
2. SiC - High Temperature Material;Drowart,1960
3. Inclusion of Small Carbon Particles in SiC Crystal Prepared by Sublimation Method
4. Growth Characteristics of Alpha-Silicon Carbide
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