Selective growth of InAs/GaAs self-organized quantum dots by shadow mask technique-Reference-Cited by-同舟云学术

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Selective growth of InAs/GaAs self-organized quantum dots by shadow mask technique

Published:2001-07 Issue: Volume:227-228 Page:1053-1056
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Songmuang R,Kiravittaya S,Thainoi S,Changmuang P,Sopitpan S,Ratanathammaphan S,Sawadsaringkarn M,Panyakeow S

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference4 articles.

1. Quantum dot lasers: breakthrough in optoelectronics

2. Growth velocity variations during metalorganic vapor phase epitaxy through an epitaxial shadow mask

3. Photoluminescence spectra of shadow masked multiple quantum wells

4. In situ lateral structuring during II–VI MBE growth with Al50Ga50As–GaAs shadow masks

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanofabrication by shadow deposition through nanostencils;Nanolithography and Patterning Techniques in Microelectronics;2005

2. In situ area-controlled self-ordering of InAs nanostructures;Applied Physics Letters;2004-02-09

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