Modification of GaAs/AlGaAs asymmetrically coupled double quantum well characteristics by proton implantation induced intermixing-Reference-Cited by-同舟云学术

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Modification of GaAs/AlGaAs asymmetrically coupled double quantum well characteristics by proton implantation induced intermixing

Published:2001-07 Issue: Volume:227-228 Page:132-137
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Miao Z.L,Lu W,Chen P.P,Li Z.F,Cai W.Y,Yuan X.Z,Liu P,Shi G.L,Xu W.L,Shen X.C,Chen C.M,Zhu D.Z,Hu J,Li M.Q

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. High‐power disorder‐defined coupled stripe AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers

2. Two‐wavelength demultiplexingp‐i‐nGaAs/AlAs photodetector using partially disordered multiple quantum well structures

3. Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disordering

4. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

5. Carrier capture in intermixed quantum wires with sharp lateral confinement

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier capture cross-section of nonradiative recombination centres introduced by proton implantation in GaAs;Semiconductor Science and Technology;2004-09-30

2. Early failure signatures of 1310 nm laser modules using electrical, optical and spectral measurements;Measurement;2003-09

3. 离子注入诱导量子阱界面混合效应的光致荧光谱研究;Acta Physica Sinica;2002

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