GSMBE growth of InP-based MSM/HEMT OEIC structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Graded-channel InGaAs–InAlAs–InP high electron mobility transistors
2. Sub-half-micrometer pseudomorphic InP/In/sub x/Ga/sub 1-x/As/InP HEMT's (0.74/spl les/x/spl les/0.81) with very high f/sub T/ values
3. Millimeter wave InP HEMT technology: Performance and applications
4. The effect of III–V ratio at the substrate surface on the quality of InP grown by GSMBE
5. Parametric study on lattice-matched and pseudomorphic InGaAs/InAlAs/InP modulation-doped heterostructures grown by GSMBE
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1. Complementary Metal Oxide Semiconductor-Compatible Back-Side-Illuminated Photodiode for Optoelectronic Integrated Circuit Devices;Japanese Journal of Applied Physics;2013-04-01
2. Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device;Japanese Journal of Applied Physics;2011-04-20
3. Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device;Japanese Journal of Applied Physics;2011-04-01
4. A Novel Transparent AZO-Gated $\hbox{Al}_{0.2} \hbox{Ga}_{0.8}\hbox{As/In}_{0.2}\hbox{Ga}_{0.8}\hbox{As}$ pHEMT and Photosensing Characteristics Thereof;IEEE Transactions on Electron Devices;2011-03
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