Thickness dependent surface morphologies and luminescent properties of ZnSe epilayers grown on (001) GaAs by metalorganic chemical vapor phase deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. 100 h II-VI blue-green laser diode
2. Molecular beam epitaxy of low defect density (⩽1×104 cm−2) ZnSSe on GaAs
3. Reduction of structural defects in II–VI blue green laser diodes
4. CdSe/ZnSSe quantum islands grown by MOVPE on homoepitaxial GaAs buffers
5. Nucleation processes during metalorganic vapor phase epitaxy of ZnSe on GaAs(001)
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1. Fabrication of the Fully Hybrid Microcavities Based on Zn(S)Se Epilayers and Amorphous Dielectrics;Journal of Russian Laser Research;2016-05
2. Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates;Semiconductors;2016-05
3. Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings;Semiconductors;2016-01
4. Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-05
5. Optical characterization of ZnSe epilayers and ZnCdSe∕ZnSe quantum wells grown on Ge∕Ge0.95Si0.05∕Ge0.9Si0.1∕Si virtual substrates;Journal of Applied Physics;2006-03-15
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