Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy-Reference-Cited by-同舟云学术

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Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy

Published:2001-07 Issue: Volume:227-228 Page:761-765
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ueno Tetsuji,Irisawa Toshifumi,Shiraki Yasuhiro,Uedono Akira,Tanigawa Shoichiro,Suzuki Ryoichi,Ohdaira Toshiyuki,Mikado Tomohisa

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Surface morphology of related GexSi1−xfilms

2. High electron mobility in modulation‐doped Si/SiGe

3. J.H. Li, C.S. Peng, Y. Wu, D.Y. Dai, J.M. Zhou, Z.H. Mai, 71 (1997) 3132.

4. Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers

5. Shouichiro Tanigawa;Ueno;Thin Solid Films,2000

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1. Comment on “Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions”;Physical Review B;2014-09-24

2. Formation and migration energies of a vacancy and an interstitial in a high-purity Si crystal determined by detecting complexes of point defects and hydrogen: Evaluation of activation energies of self-diffusion;Japanese Journal of Applied Physics;2014-08-21

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4. Strain engineering of silicon–germanium (SiGe) virtual substrates;Silicon–Germanium (SiGe) Nanostructures;2011

5. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010

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