MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures-Reference-Cited by-同舟云学术

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MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures

Published:2001-07 Issue: Volume:227-228 Page:693-698
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ivanov S.V,Solov’ev V.A,Toropov A.A,Sedova I.V,Terent’ev Ya.V,Kaygorodov V.A,Tkachman M.G,Kop’ev P.S,Molenkamp L.W

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Surface structures and properties of ZnSe grown on (100)GaAs by molecular beam epitaxy

2. Recent European developments in MBE

3. Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

4. Growth and characterisation of Cd1−xMgxSe mixed crystals

5. Quantum transport and magneto-optics in a magnetic two-dimensional electron gas

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct growth of ZnSe and CdSe on (100) InAs substrates;physica status solidi (c);2014-03-31

2. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05

3. Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics;Applied Physics Letters;2002-05-20

4. Asymmetric Hybrid Al(Ga)SbAs/InAs/Cd(Mg)Se Heterostructures for Mid-IR LEDS and Lasers;MRS Proceedings;2001

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