Growth of TlGaAs by low-temperature molecular-beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. InTlP — a proposed infrared detector material
2. Gas source molecular beam epitaxy growth of TlInP for new infrared optical devices
3. A proposed TlGaAs/AlGaAs pseudomorphic heterostructure field effect transistor
4. X-Ray Diffraction Measurements on Lattice Mismatch of InTlAs Grown on InAs Substrates
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1. First-principle investigation of TlGaAs alloys for band detection in SWIR region;Indian Journal of Physics;2022-02-21
2. Ab initio study of novel III–V nitride alloys B1-Tl N for optoelectronic applications;Computational Condensed Matter;2018-09
3. Pressure induced phase transition of semiconducting alloy TlxGa1-xAs;AIP Conference Proceedings;2018
4. Electronic structure of wurtzite Tl x In 1−x N alloys;Materials Chemistry and Physics;2017-09
5. Back Matter;Ternary Alloys Based on III-V Semiconductors;2017-07-26
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