Author:
Shimizu Atsushi,Nishizawa Jun-ichi,Oyama Yutaka,Suto Ken
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Bridgman‐Type Apparatus for the Study of Growth‐Property Relationships: Arsenic Vapor Pressure ‐ GaAs Property Relationship
2. Dislocation densities in InP single crystals grown under controlled phosphorus vapor pressure by the horizontal Bridgman method
3. H. Welker, H. Weise, Solid State Physics, Vol. 3, Academic Press, New York, 1956, p. 51.
4. K. Tada, M. Tatsumi, M. Nakagawa, T. Kawase, S. Akai, Proceedings of the 14th International Symposium on Gallium Arsenide and Related Compounds, Heraklion, Greece, 1987, p. 439.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献