Modulation doped structure with thick strained InAs channel beyond the critical thickness
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
2. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
3. Characteristics of 0.8- and 0.2- mu m gate length In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP (0.53>or=x>or=0.70) modulation-doped field-effect transistors at cryogenic temperatures
4. Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel
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1. Controlling Fermi level pinning in near-surface InAs quantum wells;Applied Physics Letters;2022-08-29
2. Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials;J INFRARED MILLIM W;2022
3. Electrophysical and structural properties of the composite quantum wells In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As with ultrathin InAs inserts;Journal of Materials Research;2015-09-08
4. Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well;Crystallography Reports;2015-05
5. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well;Semiconductors;2015-02
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