Re-entrant behaviour in GaAs(111)A homoepitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substrates
2. The homoepitaxial growth of Pt on Pt(111) studied with STM
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4. Reentrant Layer-by-Layer Etching of GaAs(001)
5. Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited
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2. Layer-by-layer growth and island formation in CdSe/ZnSe heteroepitaxy;Journal of Crystal Growth;2007-04
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4. GaAs(111)B(√19×√19)R23.4° surface reconstruction;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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