Gas source MBE growth of 1.3μm-InAsP/InGaAsP quantum wells GRINSCH laser showing low threshold current density and high output power
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Metalorganic molecular beam epitaxy of strained multi-quantum-wells for 1.3 μm wavelength laser diodes
2. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
3. High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers
4. Low threshold, compressively-strained InAsP/InGaAsP and strain-compensated InAsP/InGaP 1.3 [micro sign]m lasers grown by gas source molecular beam epitaxy
5. Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice;Chinese Physics Letters;2009-07
2. GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures;Journal of Crystal Growth;2005-08
3. GaInAsSb/AlGaAsSb laser diodes for the 2- to 3-μm range;Novel In-Plane Semiconductor Lasers IV;2005-04-01
4. Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs;Journal of Crystal Growth;2003-08
5. Tunable long-wavelength vertical-cavity lasers: the engine of next generation optical networks?;IEEE Journal of Selected Topics in Quantum Electronics;2000-11
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