MBE growth of AlGaAs/GaAs heterostructure and silicon doping on GaAs(n11)A (n=1–4) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. Demonstration of Lateral p-n Subband Junctions in Si Delta-Doped Quantum Wells on (111)A Patterned Substrates
2. Lateral tunneling transistors fabricated by plane-dependent Si-doping in nonplanar epitaxy on GaAs (311)A and (411)A substrates
3. A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates
4. Epitaxy of silicon doped gallium arsenide by molecular beam method
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of MBE grown GaAs/AlGaAs heterointerfaces with photoluminescence from quantum wells;Journal of Crystal Growth;2002-04
2. Arsenic pressure dependence of hillock morphology on GaAs (n11)A substrates grown using MBE;Journal of Crystal Growth;2001-07
3. Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure;Applied Surface Science;2000-06
4. Arsenic pressure dependence of Ga desorption from MBE high index GaAs substrates;Journal of Crystal Growth;2000-04
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