Residual impurities in high purity GaAs layers grown by liquid phase epitaxy in H2

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Residual impurities in high purity GaAs layers grown by liquid phase epitaxy in H2–Ar atmosphere

Published:1999-03 Issue: Volume:198-199 Page:1087-1091
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Czech E,Götz G,Cristiani G,Konuma M

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Gallium Arsenide and related compounds, Proc. 3rd Int. Symp., Institute of Physics Conf. Series Number 9;Hicks,1971

2. Si Contamination in Open Flow Quartz Systems for the Growth of GaAs and GaP

3. The kinetics of silicon contamination of liquid gallium in silica boats

4. The Influence of Oxygen on the Properties of GaAs Grown by Liquid Phase Epitaxy

5. Ultrahigh Purity Liquid Phase Epitaxial Growth of GaAs

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4. Equipment and Instrumentation for Liquid Phase Epitaxy;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

5. Effect of rare earth addition on GaAs-based layers grown by liquid phase epitaxy;The European Physical Journal Applied Physics;2004-07

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