Doping of CdTe with radioactive during MOCVD growth

Author:

Ostheimer V,Filz T,Hamann J,Lauer St,Schmitz Ch,Weber D,Wolf H,Wichert Th

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. IC-SLCS-7, Shallow-Level Centers in Semiconductors;Magnea,1997

2. Th. Wichert, N. Achtziger, H. Metzner, R. Sielemann, in: G. Langouche (Ed.), Hyperfine Interactions of Defects in Semiconductors, Elsevier, Amsterdam, 1992, Ch. 2, p. 79.

3. Organoindium chemistry

4. Control of the electrical properties of In-doped HgCdTe grown by MOVPE for IR detector applications

5. Evidence for In-defect complexes in CdTe

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photoluminescence of CdTe crystals grown by physical-vapor transport;Journal of Electronic Materials;2003-07

2. Photoluminescence of CdTe crystals grown by 'contactless' PVT method;X-Ray and Gamma-Ray Detectors and Applications IV;2003-01-16

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