Channeling effect in the dead layer of ion implanted, position-sensitive detectors in heavy-ion studies-Reference-Cited by-同舟云学术

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Channeling effect in the dead layer of ion implanted, position-sensitive detectors in heavy-ion studies

Published:1984-01 Issue:1 Volume:1 Page:60-65
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mingay D.W.,Rosner B.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference41 articles.

1. Ortec P-series Detectors, EG&G Ortec Inc., 100 Midland Rd., Oak Ridge, Tennessee 37830, USA.

2. An analysis of the causes of the pulse height defect and its mass dependence for heavy-ion silicon detectors

3. Pulse-height defect of silicon surface barrier detectors for uranium ions in the range of 20 to 120 MeV

4. Pulse-height defects for heavy ions in a silicon surface-barrier detector

5. AN-40 Heavy ion spectroscopy with silicon surface-barrier detectors (Ortec).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of the energy signal of surface barrier detectors on the incident charge state of nitrogen projectiles;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-07

2. The enhanced yield of nitrogen ions backscattered at 180°;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1984-03

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