Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal-Reference-Cited by-同舟云学术

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Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal

Published:1993-06 Issue: Volume:80-81 Page:132-136
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Cerofolini G.F.,Bertoni S.,Meda L.,Balboni R.,Corni F.,Frabboni S.,Ottaviani G.,Tonini R.,Foglio Para A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. On the Nature of Radiation Damage in Metals

2. Correlation between chemistry and the amount of mixing in bilayers submitted to ion bombardment

3. When is thermodynamics relevant to ion-induced atomic rearrangements in metals?

4. On the validity of a thermal spike mixing model for low‐Zmetals

5. Silicon amorphization during ion implantation as a thermal phenomenon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MeV-cluster impacts and related phenomena;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-08

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