Range distributions and thermal behaviour of Bi implanted into kcl and Al/KCl bilayer structures
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference24 articles.
1. Backscattering measurements of implanted ion distributions in double‐layer structures
2. Measurement of range distributions of zinc and nitrogen ions in multiple-layer substrates with the secondary ion microprobe
3. Arsenic-implanted polysilicon layers
4. Depth distributions of silver ions implanted in Si and SiO2
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Anomalous depth profiles of light ions and noble gases implanted into polymers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03
2. Direct and Recoil Implantation, and Collisional Ion-Beam Mixing: Recent Low-Temperature Experiments;Materials Modification by High-fluence Ion Beams;1989
3. Thermal stability and Bi diffusion in the implanted AZ111 photoresist;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-05
4. Thermal behavior and range distribution of209Bi implanted into the Al/V bilayer structure;Journal of Applied Physics;1988-05
5. Range measurements and thermal stability study of AZ111 photoresist implanted with Bi ions;Journal of Applied Physics;1988-04-15
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