Suppression of charge-up on the surface of glass during ion implantation by a large scale ion source-Reference-Cited by-同舟云学术

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Suppression of charge-up on the surface of glass during ion implantation by a large scale ion source

Published:1993-01 Issue: Volume:80-81 Page:1197-1202
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Andoh Yasunori

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Extended Abstr. 22th Int. Conf. on Solid State Devices and Materials;Yoshida,1990

2. Extended Abstr. 23th Int. Cont. on Solid State Devices and Materials;Mitani,1991

3. Proc. 5th Int. Micro Process Conf.;Kakkad,1992

4. Int. Electron Devices Meeting Technical Digest;Inoue,1991

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Various Phenomena on PSI. PSI in Plasma Processing Devices. Plasma Deposition.;Journal of Plasma and Fusion Research;1999

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