The development of an EDXRF technique for the determination of the stoichiometry and thickness of MOCVD grown epitaxial layers of Hg1−xCdxTe and a comparison with PIXE analysis-Reference-Cited by-同舟云学术

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The development of an EDXRF technique for the determination of the stoichiometry and thickness of MOCVD grown epitaxial layers of Hg1−xCdxTe and a comparison with PIXE analysis

Published:1992-06 Issue:2-3 Volume:69 Page:361-364
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Johnston Peter N.,Russo Salvy P.,Short Robert C.,Walker Scott R.,Pain Geoffrey N.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. RBS and PIXE analysis of Hg1−xCdxTe epitaxial layers on GaAs grown by MOCVD;Russo,1990

2. XRFS and PIXE: Are they complementary or competitive techniques?

3. Measurement of theM2−E1mixing inLx-ray transitions

4. Magnetic-quadrupole–electric-dipole mixing inL3x-ray transitions of heavy elements

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. X-Ray Spectrometry;Analytical Chemistry;1994-06-01

2. Studies of MOCVD grown HgCdMnTe by ion beam and related techniques;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03

3. Study of MOCVD grown Hg1−xCdxTe by ion beam techniques;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06

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