Low energy ion irradiation of H-terminated Si(001): hydrogen sputtering, beam-induced (2 × 1) reconstruction, and Si epitaxy-Reference-Cited by-同舟云学术

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Low energy ion irradiation of H-terminated Si(001): hydrogen sputtering, beam-induced (2 × 1) reconstruction, and Si epitaxy

Published:1995-08 Issue:1-4 Volume:102 Page:293-300
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ramana Murty M.V.,Atwater Harry A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference19 articles.

1. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

2. Etching of SiO2Films by Si in Ultra-High Vacuum

3. Hydrogen adsorption on Si(100)-2×1 surfaces studied by elastic recoil detection analysis

4. New Mechanism for Hydrogen Desorption from Covalent Surfaces: The Monohydride Phase on Si(100)

5. The ECR source was Model MPDR-610 made by Wavemat, Inc., Plymouth, MI, USA

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low temperature epitaxial growth by LEPECVD;Journal of Crystal Growth;1998-06

2. Low-temperature heteroepitaxy by LEPECVD;Thin Solid Films;1998-04

3. Computer simulation of ion-assisted thin film deposition;Radiation Effects and Defects in Solids;1997-06

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