Ion-induced release of H and D implanted in Be, C, Si and SiC-Reference-Cited by-同舟云学术

Ion-induced release of H and D implanted in Be, C, Si and SiC

Published:1988-06 Issue:1-4 Volume:33 Page:739-743
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Nagata S.,Yamaguchi S.,Bergsåker H.,Emmoth B.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

2. Physics of Plasma-Wall Interactions in Controlled Fusion;Möller,1986

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Oxygen ion-induced detrapping of hydrogen retained in graphite;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12

4. Surface layer destruction during ion beam analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-09

5. Ion beam induced depth profile modification of H, D and He implanted in Be, C and Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-12