Longitudinal and transversal moments of the distribution of boron ions implanted in silicon in the MeV energy range
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
1. Megaelectronvolt implantations in silicon very-large-scale integration
2. Applications of MeV ion beams to material processing
3. Theoretical Considerations on Lateral Spread of Implanted Ions
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