The peculiarities of the new phase formation by O+ ion implantation into silicon under thermo-ionization excitation-Reference-Cited by-同舟云学术

The peculiarities of the new phase formation by O+ ion implantation into silicon under thermo-ionization excitation

Published:1991-04 Issue:1-4 Volume:55 Page:750-753
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Belogorokhov A.I.,Danilin A.B.,Erokhin Yu.N.,Kalinin A.A.,Mordkovich V.N.,Saraikin V.V.,Khodos I.I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Abstracts of the EPM-89 3rd Int. Conf. on Energy Pulse and Particle Modification of Materials;Danilin,1989

2. Tablitsi Parametrov Prostranstvennogo Raspredelenia lonno-Implantirovannykh Primesey;Burenkov,1980

3. Proc. 2nd USA-USSR Seminar on Ion Implantation;Gerasimenko,1979

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3. On light suppressed divacancy formation at photon assisted ion implantation of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-10