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MeV implantation for VLSI

Published:1985-05 Issue: Volume:10-11 Page:493-497
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Pramanik D.,Saxena A.N.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Projected Range Statistics in Semiconductors;Johnson,1969

2. Ion implantation Range Data for Silicon and Germanium Device Technologies;Smith,1977

3. Recoil contribution to ion‐implantation energy‐deposition distributions

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Refractive index, free carrier concentration, and mobility depth profiles of ion implanted Si: optical investigation using FTIR spectroscopy;Journal of the Optical Society of America B;2008-04-30

2. Depth profiling of ion implanted materials with skewed doping distributions using Fourier transform infrared spectroscopy;Applied Optics;2008-01-08

3. Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy;Journal of The Electrochemical Society;2001

4. Materials for VLSI Processes;IETE Journal of Research;1997-03

5. Surface morphology and optical properties of MeV-energy heavy-ion irradiated crystalline Si and crystalline Ge: Possibility of formation of porous material;Philosophical Magazine B;1996-12

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