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A first study of radiation damage due to oxygen implantation in CuInSe2 single crystals

  • Published:1992-04 Issue:1-4 Volume:67 Page:428-431
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Crowther V.P.,Imanieh M.,Stephens G.A.,Tomlinson R.D.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Proc. 9th E.C. Photovoltaic Solar Energy Conf.;Mitchell,1989

2. The role of oxygen in CuInSe2 thin films and CdS/CuInSe2 devices

3. Proc. 9th E.C. Photovoltaic Solar Energy Conf.;Tomlinson,1989

4. Proc. 19th Photovoltaics Specialists Conf.;Stanbery,1987

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transmission electron microscopy of the amorphization of copper indium diselenide by in situ ion irradiation;Journal of Applied Physics;2012-03

2. Copper indium diselenide: crystallography and radiation-induced dislocation loops;Philosophical Magazine;2011-02

3. Photoacoustic spectroscopy use in the analysis of ion‐implanted CuInSe2 single crystals;Review of Scientific Instruments;1995-08

4. Ion channeling study of defects in CuInTe2 single crystals;Crystal Research and Technology;1995

5. Ion channeling study of hydrogenation induced damage in CuInSe2 crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-02
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