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PAC studies on the formation and stability of acceptor-defect complexes in semiconductors

  • Published:1992-01 Issue:1-2 Volume:63 Page:189-197
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Deicher M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference42 articles.

1. Defects in Silicon,1989

2. these Proceedings E-MRS 1991 Spring Meeting, Strasbourg, France, Symposium F: Nuclear Methods in Semiconductor Physics;Witthuhn,1992

3. G. Langouche (ed.), Submicroscopic Investigation of Defects in Semiconductors (Elsevier, Amsterdam) in press.

4. Microscopic Methods in Metals;Wichert,1986

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perturbed Angular Correlation Spectroscopy – A Tool for the Study of Defects and Diffusion at the Atomic Scale;Defect and Diffusion Forum;2011-03

2. STRESS AND TEMPERATURE DEPENDENCE OF THE HYPERFINE INTERACTIONS AT POINT DEFECTS IN SEMICONDUCTORS;International Journal of Modern Physics B;2010-04-10

3. THERMALLY INDUCED RE-TRAPPING OF IMPURITY PAIRS IN SILICON;International Journal of Modern Physics B;2007-09-10

4. Effects of external stress on defect complexes in semiconductors;Journal of Physics: Condensed Matter;2007-06-04

5. Copper-related defects in silicon;Materials Science in Semiconductor Processing;2004
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