Ion implantation distributions in crystalline multilayer targets-Reference-Cited by-同舟云学术

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Ion implantation distributions in crystalline multilayer targets

Published:1987-09 Issue:2 Volume:28 Page:237-241
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hautala M.,Koponen I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference25 articles.

1. Strained-Layer Epitaxy of Germanium-Silicon Alloys

2. Ion Implantation in Semiconductors and other Materials;Combasson,1972

3. Depth distributions of silver ions implanted in Si and SiO2

4. Ion Implantation in Semiconductors 1976;Ryssel,1977

5. Backscattering measurements of implanted ion distributions in double‐layer structures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ranges;Computer Simulation of Ion-Solid Interactions;1991

2. The effect of the size of microcrystals on range distributions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06

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