Ion-beam-induced amorphization and dynamic annealing processes in silicon-Reference-Cited by-同舟云学术

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Ion-beam-induced amorphization and dynamic annealing processes in silicon

Published:1990-03 Issue:1-4 Volume:48 Page:431-434
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Williams J.S.,Short K.T.,Elliman R.G.,Ridgway M.C.,Goldberg R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. Ion Implantation in Semiconductors;Dearnaley,1973

2. Ion Implantation of Semiconductors;Mayer,1970

3. A model for the formation of amorphous Si by ion bombardment

4. Proc. 1st Int. Conf. on Ion Implantation;Stein,1971

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