Lattice location of ion-implanted radioactive dopants in compound semiconductors-Reference-Cited by-同舟云学术

Lattice location of ion-implanted radioactive dopants in compound semiconductors

Published:1990-03 Issue:1-4 Volume:48 Page:211-215
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Winter S.,Blässer S.,Hofsäss H.,Jahn S.,Lindner G.,Wahl U.,Recknagel E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

3. Proc. 14th Int. Conf. on Defects in Semiconductors, ICDS-14;Hofsäss,1986

4. Proc. 15th Int. Conf. on Defects in Semiconductors, ICDS-15;Winter,1989

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