Development of a process to achieve residue-free photoresist removal after high-dose ion implantation-Reference-Cited by-同舟云学术

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Development of a process to achieve residue-free photoresist removal after high-dose ion implantation

Published:1991-04 Issue:1-4 Volume:55 Page:281-286
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

McOmber Janice I.,Nair Rajesh S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Proc. Technical Symp. for Advanced Equipment;Chung,1989

2. Ion Implantation Science and Technology;Smith,1988

3. Proc. 8th Int. Symp. on Plasma Processing;McOmber,1990

4. 1988 Technical Proc.;Reichelderfer,1988

5. SPIE Conf. Proc.;Davies,1990

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3. High Dose Implant Stripping;Handbook of Cleaning in Semiconductor Manufacturing;2011-02-22

4. Surface treatment of carbon nanotubes via plasma technology;Polymer–Carbon Nanotube Composites;2011

5. Removal of Ion-Implanted Photoresists Using Atomic Hydrogen;Journal of The Electrochemical Society;2010

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