TPD and ESD of hydrogen from disilane covered Si(100)
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
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2. Thermal and photostimulated reactions on Si2H6-adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic-layer epitaxy
3. Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6
4. Transmission characteristics of a cylindrical energy analyzer
5. Electron‐stimulated and thermal desorption study of trimethylsilane from Si(100)
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