An RBS analysis of the low temperature mass transport of Au in GaAs-Reference-Cited by-同舟云学术

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An RBS analysis of the low temperature mass transport of Au in GaAs

Published:1991-05 Issue: Volume:56-57 Page:753-756
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Patuwathavithane C.S.,Williams J.R.,Tin C.C.,Barnes P.A.,Bozack M.J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Alloyed ohmic contacts to GaAs

2. Metal Semiconductor Contacts;Roderick,1988

3. Behaviour of gold in the vicinity of the interface during annealing

4. Technology of gallium arsenide

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well;Journal of Infrared, Millimeter, and Terahertz Waves;2020-06-26

2. Four-Dimensional Probing of Phase-Reaction Dynamics in Au/GaAs Nanowires;Nano Letters;2019-01-24

3. Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy;Proceedings of the National Academy of Sciences;2017-11-20

4. Root-like structure at the nanowire/substrate interface in GaAs nanowires;Applied Physics Letters;2006-01-16

5. Rutherford backscattering spectroscopy analysis of Au/Cr/GaAs;SPIE Proceedings;1999-04-07

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