Lattice site location of clustered boron atoms in silicon

Author:

Smulders P.J.M.,Boerma D.O.,Nielsen B.Bech,Swanson M.L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Formation and evolution of small B clusters in Si: Ion channeling study;Physical Review B;2010-02-17

2. Correlation between the spectroscopic and structural properties with the occupation of Eu3+ sites in powdered Eu3+-doped LiTaO3 prepared by the Pechini method;Journal of Applied Physics;2009-09-15

3. Physical insight into the phenomenon of B clustering in Si at room temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04

4. Mechanism of de-activation and clustering of B in Si at extremely high concentration;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12

5. Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08

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