Sputtering effects in high dose Bi+ implantation of GaAs

Author:

Budinov H.I.,Karpuzov D.S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Computer simulations of surface analysis using ion beams;Progress in Surface Science;2006-01

2. High dose arsenic implantation of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-03

3. Dynamic Monte-Carlo simulation of compositional change and atomic redistribution in multicomponent targets under ion bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-06

4. Defect depth profiles in B+ and As+ implanted Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07

5. Ranges;Computer Simulation of Ion-Solid Interactions;1991

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