Ion beam mixing of noble metals-Ge bilayer thin films-Reference-Cited by-同舟云学术

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Ion beam mixing of noble metals-Ge bilayer thin films

Published:1990-05 Issue:3 Volume:47 Page:263-270
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Saleh N.S.,Al-Saleh K.A.,Saleh A.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference28 articles.

1. Kinetics of WSi2 formation at low and high temperatures

2. Kinetics of silicide formation by thin films of V on Si and SiO2 substrates

3. Chu Te Chang, unpublished work.

4. Ion Implantation, Sputtering and their Applications;Townsnend,1976

5. Ion Implantation in Semiconductors;Carter,1976

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations;Physical Review B;2012-04-27

2. Ion Beam Mixing of Sb/Glass Studied by Rutherford Backscattering Spectrometry;Arabian Journal for Science and Engineering;2012-01

3. Study of interface mixing induced by Ar+ ion irradiation on Ag–Ge bilayer system;Applied Physics A;2009-08-20

4. Mixing in Au/Ge system induced by Ar+ ion irradiation;Journal of Materials Science;2007-05-18

5. Ion beam induced atomic transport in Pd/Ge system;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-11

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