Formation mechanisms of dislocation and Si island in low-energy SIMOX
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. Int. Electron Devices Meeting;Yoshimi,1987
2. Symp. on VLSI Tech.;Kusunoki,1988
3. Int. Electron Devices Meeting;Malhi,1982
4. Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film
5. Preparation of Thin Silicon-on-Insulator Films by Low-Energy Oxygen Ion Implantation
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