Author:
Hall J.Michael,Glawischnig H.,Holtschmidt W.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
9 articles.
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1. Effects of plasma induced charges on thin oxide of CMOS technologies;Microelectronics Journal;1996-10
2. Process‐Induced Gate Oxide Charge Collector Damage;Journal of The Electrochemical Society;1992-10-01
3. PMOS integrated circuit fabrication using BF3 plasma immersion ion implantation;Journal of Electronic Materials;1992-01
4. Effect of the PI9000/9200 charge neutralization system on advanced device characteristics;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-10
5. A wafer charge-up-reducing system of a high-current ion implanter;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02