Improvements in dose uniformity on high current ion implantation systems-Reference-Cited by-同舟云学术

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Improvements in dose uniformity on high current ion implantation systems

Published:1987-01 Issue:1-4 Volume:21 Page:424-427
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Eddy R.,Long A.,Smith S.,Tkach J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. 5th Int. Conf. on Ion Implantation Equipment and Techniques;Liebert,1985

2. SPIE Conf. on Advanced Applications of Ion Implantation;Thorburn,1985

3. 5th Int. Conf. on Ion Implantation Equipment and Techniques;Ehrlich,1985

4. these Proceedings Ion Implantation Technology;Wonson,1987

5. these Proceedings Ion Implantation Technology;Thayer,1987

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonintrusive position measurement of magnetically scanned ion beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

2. A new computer designed faraday system for high current ion implantation systems;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01

3. XP series high current ion implantation systems for up to 200 mm wafer processing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01

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