The precision implant 9000, a new concept in ion implantation systems-Reference-Cited by-同舟云学术

The precision implant 9000, a new concept in ion implantation systems

Published:1987-01 Issue:1-4 Volume:21 Page:328-333
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Steen L.S.,Hall J.Michael,Aitken D.,Plumb F.G.,Wauk M.T.,Bright N.,Pruitt C.,Robinson L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. these Proceedings Ion Implantation Technology;Wauk,1987

2. these Proceedings Ion Implantation Technology;Southwood,1987

3. Apparatus and Methods for Ion Implantation;Aitken,1986

4. these Proceedings Ion Implantation Technology;Aitken,1987

5. Apparatus for Ion Implantation;Aitken,1986

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Precision implant 9200 — An implantation system for 200 mm wafers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

3. Control of surface charging during high current ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

4. Performance of the applied materials PI9000 series ion implantation systems;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02