Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs-Reference-Cited by-同舟云学术

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Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs

Published:1992-01 Issue:1-2 Volume:63 Page:166-172
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Corbel C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference26 articles.

1. Positrons in Solids,1979

2. Positron Solid State Physics,1983

3. Positron Studies of Defects in III–V Semiconductor Compounds

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of defects and strain relaxation in GaAs/InxGa1−xAs/GaAs heterostructures using photoluminescence, positron annihilation, and x-ray diffraction;Journal of Applied Physics;2000-06-15

2. TRANSIENT DIFFUSION OF BERYLLIUM AND SILICON IN GALLIUM ARSENIDE;Annual Review of Materials Science;1998-08

3. Modeling Diffusion in Gallium Arsenide: Recent Work;MRS Bulletin;1995-04

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