Comparative XPS and SIMS depth profile analysis of Cu-implanted silicon: evidence of segregation effects
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. The Stopping and Range of Ions in Solids;Ziegler,1986
2. Ion Implantation and Beam Processing;Andersen,1984
3. Bombardment-induced compositional change with alloys, oxides, oxysalts, and halides
4. Ion induced surface compositional changes of α brass; a comparative study by AES and sputtered thermal ion mass spectrometry. Application to quantitative AES
5. European Conf. on Applications of Surface Analysis;Aucouturier,1989
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1. Experimental and simulated XPS depth profiles of low-energy high dose nitrogen implanted into aluminium;Vacuum;1995-11
2. Investigation of sputter-induced surface composition modification during in-depth profiling of implanted materials by sims, XPS and AES;Surface and Interface Analysis;1992-03
3. Atomic Spectrometry Update—Clinical and Biological Materials, Foods and Beverages;J. Anal. At. Spectrom.;1992
4. Phosphorus implantation in titanium: application to calibration analysis;Journal of Alloys and Compounds;1991-12
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