Energy loss distributions for 625 keV H+ ions channeled near the 〈100〉 axis in silicon

Author:

Dygo A.,Boshart M.A.,Grant M.W.,Seiberling L.E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Channeling: Theory, Observation and Applications,1973

2. Channeling and related effects in the motion of charged particles through crystals

3. Materials Analysis by Ion Channeling;Feldman,1982

4. Energy Loss and Ion Ranges in Solids;Kumakhov,1981

5. Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single Crystals

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1. Angular dependence for the energy loss of channeled He ions near the Si and directions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-05

2. Energy Losses of Muons, Pions, Protons, and Deuterons Channeled in Si;Physical Review Letters;2000-11-27

3. Angular dependence of the electronic stopping power of Li ions channeled around the Si 〈1 0 0〉 direction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03

4. Simulations of channeling spectra in the system p+28Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-05

5. Experimental test of the single adatom exchange model in surfactant-mediated growth of Ge on Si(100);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03

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