Lattice location of erbium atoms implanted into silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
1. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
2. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
3. Evaluation of erbium‐doped silicon for optoelectronic applications
4. Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon
5. A. Polman, J.S. Custer, E. Snoeks and G.N. van den Hoven, Nucl. Instr. and Meth. B 80/81 (199) 653.
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First-principles study of location of Er3+ ion—Relationship to understanding of hyperfine interactions in the optoelectronic erbium-silicon system;HFI/NQI 2007;2008
2. First-principles study of location of Er3 + ion—relationship to understanding of hyperfine interactions in the optoelectronic erbium–silicon system;Hyperfine Interactions;2007-07
3. Evolution of erbium lattice locations in silicon: Effects of thermal annealing and codoped impurities (carbon, nitrogen, oxygen, and fluorine);Journal of Applied Physics;2006-07-15
4. Erbium-implanted silicon–germanium;Journal of Applied Physics;2005-01
5. Evidence of oxygen-stabilized hexagonal interstitial erbium in silicon;Physical Review B;2003-07-25
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