Relaxation of ion implant damage in silicon wafers at room temperature measured by thermal waves and double implant sheet resistance-Reference-Cited by-同舟云学术

Relaxation of ion implant damage in silicon wafers at room temperature measured by thermal waves and double implant sheet resistance

Published:1987-01 Issue:1-4 Volume:21 Page:554-558
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Schuur John,Waters Craig,Maneval Jim,Tripsis Nick,Rosencwaig Allan,Taylor Michael,Smith W.Lee,Golding Lawrence,Opsal Jon

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference6 articles.

3. Ion Implantation Equipment and Techniques;Smith,1985

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Chapter 4 Photomodulated Thermoreflectance Investigation of Implanted Wafers. Annealing Kinetics of Defects;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997

3. Use of the temperature dependence of the therma-wave technique as a thermometer;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-05

4. Modification of time dependence in thermal wave signal from ion implanted wafers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04

5. Sources of variation in therma wave measurements of ion implanted wafers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-04